Persistent enhancement of the carrier density in electron irradiated InAs nanowires
Identifieur interne : 000749 ( Main/Repository ); précédent : 000748; suivant : 000750Persistent enhancement of the carrier density in electron irradiated InAs nanowires
Auteurs : RBID : Pascal:13-0243703Descripteurs français
- Pascal (Inist)
- Densité porteur charge, Densité électron, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Nanofil, Nanomatériau, Conductivité électrique, Dopage, Effet rayonnement, Vide poussé, Chimie surface, Effet surface, Simulation numérique, Porteur libre, Faisceau électron, Inspection, Traitement matériau, Section efficace, Coupe transversale, Propriété électrique, 8107V, 8107B, 7363, 6182R.
- Wicri :
- concept : Dopage.
English descriptors
- KwdEn :
- Carrier density, Cross section, Cross sections, Digital simulation, Doping, Electrical conductivity, Electrical properties, Electron beams, Electron density, Free carrier, High vacuum, III-V compound, III-V semiconductors, Indium arsenides, Inspection, Material processing, Nanostructured materials, Nanowires, Radiation effects, Surface chemistry, Surface effect.
Abstract
We report a significant and persistent enhancement of the conductivity in free-standing non-intentionally doped InAs nanowires upon irradiation in ultra-high vacuum. Combining four-point probe transport measurements performed on nanowires with different surface chemistries, field effect based measurements and numerical simulations of the electron density, the change in the conductivity is found to be caused by an increase in the surface free carrier concentration. Although an electron beam of a few keV, typically used for the inspection and the processing of materials, propagates through the entire nanowire cross-section, we demonstrate that the electrical properties of the nanowire are predominantly affected by radiation-induced defects occurring at the nanowire surface and not in the bulk.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 000A28
Links to Exploration step
Pascal:13-0243703Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Persistent enhancement of the carrier density in electron irradiated InAs nanowires</title><author><name sortKey="Durand, Corentin" uniqKey="Durand C">Corentin Durand</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN, (CNRS, UMR 8520), Département ISEN, 41 Boulevard Vauban</s1><s2>59046 Lille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Lille</settlement></placeName></affiliation></author><author><name sortKey="Berthe, Maxime" uniqKey="Berthe M">Maxime Berthe</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN, (CNRS, UMR 8520), Département ISEN, 41 Boulevard Vauban</s1><s2>59046 Lille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Lille</settlement></placeName></affiliation></author><author><name sortKey="Makoudi, Younes" uniqKey="Makoudi Y">Younes Makoudi</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN, (CNRS, UMR 8520), Département ISEN, 41 Boulevard Vauban</s1><s2>59046 Lille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Lille</settlement></placeName></affiliation></author><author><name sortKey="Nys, Jean Philippe" uniqKey="Nys J">Jean-Philippe Nys</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN, (CNRS, UMR 8520), Département ISEN, 41 Boulevard Vauban</s1><s2>59046 Lille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Lille</settlement></placeName></affiliation></author><author><name sortKey="Leturcq, Renaud" uniqKey="Leturcq R">Renaud Leturcq</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN, (CNRS, UMR 8520), Département ISEN, 41 Boulevard Vauban</s1><s2>59046 Lille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Lille</settlement></placeName></affiliation></author><author><name sortKey="Caroff, Philippe" uniqKey="Caroff P">Philippe Caroff</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN, (CNRS, UMR 8520), Département ISEN, 41 Boulevard Vauban</s1><s2>59046 Lille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Lille</settlement></placeName></affiliation></author><author><name sortKey="Grandidier, Bruno" uniqKey="Grandidier B">Bruno Grandidier</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN, (CNRS, UMR 8520), Département ISEN, 41 Boulevard Vauban</s1><s2>59046 Lille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Lille</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0243703</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0243703 INIST</idno><idno type="RBID">Pascal:13-0243703</idno><idno type="wicri:Area/Main/Corpus">000A28</idno><idno type="wicri:Area/Main/Repository">000749</idno></publicationStmt><seriesStmt><idno type="ISSN">0957-4484</idno><title level="j" type="abbreviated">Nanotechnology : (Bristol, Print)</title><title level="j" type="main">Nanotechnology : (Bristol. Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier density</term><term>Cross section</term><term>Cross sections</term><term>Digital simulation</term><term>Doping</term><term>Electrical conductivity</term><term>Electrical properties</term><term>Electron beams</term><term>Electron density</term><term>Free carrier</term><term>High vacuum</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Inspection</term><term>Material processing</term><term>Nanostructured materials</term><term>Nanowires</term><term>Radiation effects</term><term>Surface chemistry</term><term>Surface effect</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Densité porteur charge</term><term>Densité électron</term><term>Arséniure d'indium</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Nanofil</term><term>Nanomatériau</term><term>Conductivité électrique</term><term>Dopage</term><term>Effet rayonnement</term><term>Vide poussé</term><term>Chimie surface</term><term>Effet surface</term><term>Simulation numérique</term><term>Porteur libre</term><term>Faisceau électron</term><term>Inspection</term><term>Traitement matériau</term><term>Section efficace</term><term>Coupe transversale</term><term>Propriété électrique</term><term>8107V</term><term>8107B</term><term>7363</term><term>6182R</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report a significant and persistent enhancement of the conductivity in free-standing non-intentionally doped InAs nanowires upon irradiation in ultra-high vacuum. Combining four-point probe transport measurements performed on nanowires with different surface chemistries, field effect based measurements and numerical simulations of the electron density, the change in the conductivity is found to be caused by an increase in the surface free carrier concentration. Although an electron beam of a few keV, typically used for the inspection and the processing of materials, propagates through the entire nanowire cross-section, we demonstrate that the electrical properties of the nanowire are predominantly affected by radiation-induced defects occurring at the nanowire surface and not in the bulk.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0957-4484</s0></fA01><fA03 i2="1"><s0>Nanotechnology : (Bristol, Print)</s0></fA03><fA05><s2>24</s2></fA05><fA06><s2>27</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Persistent enhancement of the carrier density in electron irradiated InAs nanowires</s1></fA08><fA11 i1="01" i2="1"><s1>DURAND (Corentin)</s1></fA11><fA11 i1="02" i2="1"><s1>BERTHE (Maxime)</s1></fA11><fA11 i1="03" i2="1"><s1>MAKOUDI (Younes)</s1></fA11><fA11 i1="04" i2="1"><s1>NYS (Jean-Philippe)</s1></fA11><fA11 i1="05" i2="1"><s1>LETURCQ (Renaud)</s1></fA11><fA11 i1="06" i2="1"><s1>CAROFF (Philippe)</s1></fA11><fA11 i1="07" i2="1"><s1>GRANDIDIER (Bruno)</s1></fA11><fA14 i1="01"><s1>Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN, (CNRS, UMR 8520), Département ISEN, 41 Boulevard Vauban</s1><s2>59046 Lille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s2>275706.1-275706.7</s2></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22480</s2><s5>354000503868620200</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>44 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0243703</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Nanotechnology : (Bristol. Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We report a significant and persistent enhancement of the conductivity in free-standing non-intentionally doped InAs nanowires upon irradiation in ultra-high vacuum. Combining four-point probe transport measurements performed on nanowires with different surface chemistries, field effect based measurements and numerical simulations of the electron density, the change in the conductivity is found to be caused by an increase in the surface free carrier concentration. Although an electron beam of a few keV, typically used for the inspection and the processing of materials, propagates through the entire nanowire cross-section, we demonstrate that the electrical properties of the nanowire are predominantly affected by radiation-induced defects occurring at the nanowire surface and not in the bulk.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A07V</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07B</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C63</s0></fC02><fC02 i1="04" i2="3"><s0>001B60A82R</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Densité porteur charge</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Carrier density</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Densité électron</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Electron density</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Composé III-V</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>III-V compound</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Nanofil</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Nanowires</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Dopage</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Doping</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Doping</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Effet rayonnement</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Radiation effects</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Vide poussé</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>High vacuum</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Chimie surface</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Surface chemistry</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Effet surface</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Surface effect</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Efecto superficie</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Simulation numérique</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Digital simulation</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Porteur libre</s0><s5>29</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Free carrier</s0><s5>29</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Portador libre</s0><s5>29</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Faisceau électron</s0><s5>30</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Electron beams</s0><s5>30</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Inspection</s0><s5>31</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Inspection</s0><s5>31</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Traitement matériau</s0><s5>32</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Material processing</s0><s5>32</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Tratamiento material</s0><s5>32</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Section efficace</s0><s5>33</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Cross sections</s0><s5>33</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Coupe transversale</s0><s5>34</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Cross section</s0><s5>34</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Corte transverso</s0><s5>34</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Propriété électrique</s0><s5>35</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Electrical properties</s0><s5>35</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>8107V</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>8107B</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>7363</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>6182R</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>231</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000749 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000749 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:13-0243703
|texte= Persistent enhancement of the carrier density in electron irradiated InAs nanowires
}}
| This area was generated with Dilib version V0.5.77. |  |